{"title":"用于多频段应用的0.9-2.5 GHz宽带直接转换接收机","authors":"T. Nakagawa, M. Kawashima, H. Hayashi, K. Araki","doi":"10.1109/GAAS.2001.964340","DOIUrl":null,"url":null,"abstract":"A wideband direct conversion receiver for multi-band applications is presented. The developed receiver consists of one quadrature downconverter, one low-noise amplifier (LNA), and two voltage-controlled oscillators (VCOs). The key component ICs are fabricated on GaAs and Si substrates. The receiver can receive three different frequency bands, i.e. the 900 MHz band, 1.9 GHz band, and 2.4 GHz band.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 0.9-2.5 GHz wideband direct conversion receiver for multi-band applications\",\"authors\":\"T. Nakagawa, M. Kawashima, H. Hayashi, K. Araki\",\"doi\":\"10.1109/GAAS.2001.964340\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband direct conversion receiver for multi-band applications is presented. The developed receiver consists of one quadrature downconverter, one low-noise amplifier (LNA), and two voltage-controlled oscillators (VCOs). The key component ICs are fabricated on GaAs and Si substrates. The receiver can receive three different frequency bands, i.e. the 900 MHz band, 1.9 GHz band, and 2.4 GHz band.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964340\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.9-2.5 GHz wideband direct conversion receiver for multi-band applications
A wideband direct conversion receiver for multi-band applications is presented. The developed receiver consists of one quadrature downconverter, one low-noise amplifier (LNA), and two voltage-controlled oscillators (VCOs). The key component ICs are fabricated on GaAs and Si substrates. The receiver can receive three different frequency bands, i.e. the 900 MHz band, 1.9 GHz band, and 2.4 GHz band.