Model of coupled defect level recombination with participation of multiphonons

We present a new model of two coupled defect-level recombination. Calculation of the generation and recombination rates is based on the so-called exchange times. These allow calculating the occupation probability of the trapping centres and subsequently the generation-recombination rates of free charge carriers appearing in the continuity equations. Each of these two coupled defect levels has its specific trap density, position in the forbidden band and capture cross-section obtained from DLTS measurements.