Cell thickness optimization of dual junction InGaP/GaAs solar cell against temperature variation

A numerical modelling of highly efficient InGaP/GaAs dual-junction solar cell using advanced TCAD tool Silvaco ATLAS gives a theoretical conversion efficiency up to 31.08% at 1 sun under AM1.5 illumination. Within a temperature range from 0 to 150°C, the critical performance parameter such as $\mathrm{J}_{\mathrm{s}\mathrm{c}}, \mathrm{V}_{\mathrm{o}\mathrm{c}}$ and Photogeneration rates of this optimised cell were extracted. It is found that with the increase in the cell temperature, the sub cells quantum efficiencies increase slightly and due to the energy gap narrowing effect with increase in cell temperature, the red-shift phenomena of absorption limit for all sub cells are observed. It was also found that with increased in temperature, $\mathrm{V}_{\mathrm{o}\mathrm{c}}$ decreases which are due to the increase in reverse saturation current, thereby leading to the decrease in the overall FF and efficiency of the solar cell. This work therefore calculates the optimum thickness of the modelled solar cell so that maximum efficiency is gained even if the temperature is elevated.