块状氮化镓晶体的氨热技术

D. Ehrentraut, T. Fukuda
{"title":"块状氮化镓晶体的氨热技术","authors":"D. Ehrentraut, T. Fukuda","doi":"10.1109/ICIPRM.2010.5516027","DOIUrl":null,"url":null,"abstract":"The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ammonothermal technology for bulk gallium nitride crystals\",\"authors\":\"D. Ehrentraut, T. Fukuda\",\"doi\":\"10.1109/ICIPRM.2010.5516027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

块状氮化镓晶体的生长只能在气相或液相中进行。氨热法正在成为氢化物气相生长法的潜在替代品。简要介绍了氮化镓的酸性氨热生长技术和一些最新的研究成果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Ammonothermal technology for bulk gallium nitride crystals
The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region Synthesis of cubic-GaN nanoparticles using the Na flux method: A novel use for the ultra-high pressure apparatus Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers Low driving voltage spatial light modulator fabricated by ultrahigh-purity GaAs Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1