{"title":"采用22nm FDSOI技术的22.2 dbm Psat的20 - 28ghz四叠毫米波功率放大器","authors":"Bowen Xia, Wen-hua Chen, Long Chen, Zhenghe Feng","doi":"10.1109/IWS55252.2022.9977627","DOIUrl":null,"url":null,"abstract":"In this paper, a 20–28 GHz four-stack millimeter-wave power amplifier (PA) is presented. The proposed P A adopted four-stack technology to raise the supply voltage to 3.3 V, which greatly increased the output power to 22.2dBm at 22GHz without complex power combining techniques and avoiding efficient loss introduced by combining network and DC-DC converter. Thanks to the transformer-based wideband matching network, the proposed PA provides more than 11.8 dB gain and 19.1dBm maximum power between 20–28 GHz. The proposed P A also has a compact size occupying only $900\\mu \\mathrm{m} {}^{*}500\\mu \\mathrm{m}$ in 22nm FDSOI technology including all pads and seal ring.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 20–28 GHz Four-Stack Millimeter-Wave Power Amplifier with 22.2-dBm Psat in 22-nm FDSOI Technology\",\"authors\":\"Bowen Xia, Wen-hua Chen, Long Chen, Zhenghe Feng\",\"doi\":\"10.1109/IWS55252.2022.9977627\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 20–28 GHz four-stack millimeter-wave power amplifier (PA) is presented. The proposed P A adopted four-stack technology to raise the supply voltage to 3.3 V, which greatly increased the output power to 22.2dBm at 22GHz without complex power combining techniques and avoiding efficient loss introduced by combining network and DC-DC converter. Thanks to the transformer-based wideband matching network, the proposed PA provides more than 11.8 dB gain and 19.1dBm maximum power between 20–28 GHz. The proposed P A also has a compact size occupying only $900\\\\mu \\\\mathrm{m} {}^{*}500\\\\mu \\\\mathrm{m}$ in 22nm FDSOI technology including all pads and seal ring.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977627\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 20–28 GHz Four-Stack Millimeter-Wave Power Amplifier with 22.2-dBm Psat in 22-nm FDSOI Technology
In this paper, a 20–28 GHz four-stack millimeter-wave power amplifier (PA) is presented. The proposed P A adopted four-stack technology to raise the supply voltage to 3.3 V, which greatly increased the output power to 22.2dBm at 22GHz without complex power combining techniques and avoiding efficient loss introduced by combining network and DC-DC converter. Thanks to the transformer-based wideband matching network, the proposed PA provides more than 11.8 dB gain and 19.1dBm maximum power between 20–28 GHz. The proposed P A also has a compact size occupying only $900\mu \mathrm{m} {}^{*}500\mu \mathrm{m}$ in 22nm FDSOI technology including all pads and seal ring.