在蚀刻停止0.5-/spl mu/m PHEMT上进行可靠性寿命测试,减小栅极间距和欧姆宽度几何形状

H. Saigusa, A. Malik, L. Rushing, F. Gao
{"title":"在蚀刻停止0.5-/spl mu/m PHEMT上进行可靠性寿命测试,减小栅极间距和欧姆宽度几何形状","authors":"H. Saigusa, A. Malik, L. Rushing, F. Gao","doi":"10.1109/GAASRW.2003.183765","DOIUrl":null,"url":null,"abstract":"In today’s highly competitive semiconductor IC market, it is critical to address the market requirements of low cost, superb performance, and high reliability for the success of any product. It becomes increasingly challenging to meet these requirements that sometimes conflict with each other. Skyworks recently developed a third generation pseudomorphic high electron mobility transistor (PHEMT) process with reduced gate pitch and ohmic width geometry to increase the FET density factor. While this initiative significantly improves the throughput, we have launched a series of reliability experiments to assess the possible impacts on device reliability. Potential issues include greater leakage, smaller breakdown voltage, and hotter channel under the same electrical bias conditions.","PeriodicalId":431077,"journal":{"name":"Proceedings GaAs Reliability Workshop, 2003.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability lifetest on etch-stop 0.5-/spl mu/m PHEMT with reduced gate pitch and ohmic width geometry\",\"authors\":\"H. Saigusa, A. Malik, L. Rushing, F. Gao\",\"doi\":\"10.1109/GAASRW.2003.183765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In today’s highly competitive semiconductor IC market, it is critical to address the market requirements of low cost, superb performance, and high reliability for the success of any product. It becomes increasingly challenging to meet these requirements that sometimes conflict with each other. Skyworks recently developed a third generation pseudomorphic high electron mobility transistor (PHEMT) process with reduced gate pitch and ohmic width geometry to increase the FET density factor. While this initiative significantly improves the throughput, we have launched a series of reliability experiments to assess the possible impacts on device reliability. Potential issues include greater leakage, smaller breakdown voltage, and hotter channel under the same electrical bias conditions.\",\"PeriodicalId\":431077,\"journal\":{\"name\":\"Proceedings GaAs Reliability Workshop, 2003.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings GaAs Reliability Workshop, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2003.183765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings GaAs Reliability Workshop, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2003.183765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在当今竞争激烈的半导体集成电路市场中,满足低成本,卓越性能和高可靠性的市场要求对于任何产品的成功都至关重要。满足这些有时相互冲突的需求变得越来越具有挑战性。Skyworks最近开发了第三代伪晶高电子迁移率晶体管(PHEMT)工艺,减少栅极间距和欧姆宽度几何形状,以增加场效应晶体管密度因子。虽然这一举措显著提高了吞吐量,但我们已经启动了一系列可靠性实验,以评估对设备可靠性可能产生的影响。潜在的问题包括在相同的电偏置条件下更大的泄漏,更小的击穿电压和更热的通道。
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Reliability lifetest on etch-stop 0.5-/spl mu/m PHEMT with reduced gate pitch and ohmic width geometry
In today’s highly competitive semiconductor IC market, it is critical to address the market requirements of low cost, superb performance, and high reliability for the success of any product. It becomes increasingly challenging to meet these requirements that sometimes conflict with each other. Skyworks recently developed a third generation pseudomorphic high electron mobility transistor (PHEMT) process with reduced gate pitch and ohmic width geometry to increase the FET density factor. While this initiative significantly improves the throughput, we have launched a series of reliability experiments to assess the possible impacts on device reliability. Potential issues include greater leakage, smaller breakdown voltage, and hotter channel under the same electrical bias conditions.
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