{"title":"环栅MOSFET的亚阈值电流建模:高斯方法","authors":"P. Roy, B. Syamal, N. Mohankumar, C. Sarkar","doi":"10.1109/ELECTRO.2009.5441170","DOIUrl":null,"url":null,"abstract":"We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Subthreshold current modeling of surrounding gate MOSFET: A gaussian approach\",\"authors\":\"P. Roy, B. Syamal, N. Mohankumar, C. Sarkar\",\"doi\":\"10.1109/ELECTRO.2009.5441170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.\",\"PeriodicalId\":149384,\"journal\":{\"name\":\"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECTRO.2009.5441170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTRO.2009.5441170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Subthreshold current modeling of surrounding gate MOSFET: A gaussian approach
We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.
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