Cu-Cu键中的空洞成熟

Hung-Che Liu, A. Gusak, K. Tu, Chih Chen
{"title":"Cu-Cu键中的空洞成熟","authors":"Hung-Che Liu, A. Gusak, K. Tu, Chih Chen","doi":"10.1109/LTB-3D53950.2021.9598384","DOIUrl":null,"url":null,"abstract":"Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Void ripening in Cu-Cu bonds\",\"authors\":\"Hung-Che Liu, A. Gusak, K. Tu, Chih Chen\",\"doi\":\"10.1109/LTB-3D53950.2021.9598384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.\",\"PeriodicalId\":198318,\"journal\":{\"name\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D53950.2021.9598384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

Cu-Cu接头在高性能电气产品中具有发展潜力。虽然在结合界面中观察到孔洞,但未见有关成熟过程中孔洞大小分布及演化的报道。本文以特定方向得到了在200℃下30,60和120min的空隙尺寸分布。退火30min、60min和120min时,平均气孔直径分别为49nm、70nm和96nm。建立了一个简单的成熟动力学模型,其半径与退火时间的关系与实验数据吻合较好。
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Void ripening in Cu-Cu bonds
Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.
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