9.3基于bjt的温度传感器,加热辅助电压校准后,在- 55°C至+125°C范围内,封装稳扎性误差为±0.3°C (3σ)

B. Yousefzadeh, K. Makinwa
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引用次数: 19

摘要

本文介绍了一种基于bjt的温度传感器,它可以在室温下的纯电测量基础上精确地在陶瓷和塑料封装中进行修整。这是通过将[1]中的电压校准技术与片上加热器相结合来实现的,该加热器可以在0.5s内将感测bjt从室温加热到~ 85°C。测量表明,传感器可以在军用范围内(- 55至+125°C)修剪到±0.3°C (3σ)的不精度。这与传统温度校准后获得的不准确性相似,即在定义明确的温度下,但需要的校准时间和基础设施要少得多。
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9.3 A BJT-based temperature sensor with a packaging-robust inaccuracy of ±0.3°C (3σ) from −55°C to +125°C after heater-assisted voltage calibration
This paper presents a BJT-based temperature sensor, which can be accurately trimmed in both ceramic and plastic packages, on the basis of purely electrical measurements at room temperature. This is achieved by combining the voltage-calibration technique from [1] with an on-chip heater, which can heat the sensing BJTs from room temperature to ∼85°C in 0.5s. Measurements show that the sensor can then be trimmed to an inaccuracy of ±0.3°C (3σ) over the military range (−55 to +125°C). This is similar to the inaccuracy obtained after conventional temperature calibration, i.e., at well-defined temperatures, but requires much less calibration time and infrastructure.
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