{"title":"考虑垂直位移和边缘位移效应的HfO2High-K栅极介质100nm满耗尽SOI CMOS器件CGS(D)/CS(D) g电容现象","authors":"Yu-Sheng Lin, Chia‐Hong Lin, J. Kuo, K. Su","doi":"10.1109/EDSSC.2005.1635214","DOIUrl":null,"url":null,"abstract":"This paper reports the C<inf>GS(D)</inf>/C<inf>S(D)G</inf>capacitance phenomenon of 100nm fully-depleted (FD) SOI CMOS devices with HfO<inf>2</inf>high-k gate dielectric considering vertical and fringing displacement effect. According to the 2D simulation results, a unique two-step C<inf>S(D)G</inf>/C<inf>GS</inf>versus V<inf>G</inf>curve exists for the device with the 1.5nm HfO<inf>2</inf>gate dielectric due to the vertical and fringing displacement effects.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CGS(D)/CS(D)GCapacitance Phenomenon of 100nm Fully-Depleted SOI CMOS Devices with HfO2High-K Gate Dielectric Considering Vertical and Fringing Displacement Effects\",\"authors\":\"Yu-Sheng Lin, Chia‐Hong Lin, J. Kuo, K. Su\",\"doi\":\"10.1109/EDSSC.2005.1635214\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the C<inf>GS(D)</inf>/C<inf>S(D)G</inf>capacitance phenomenon of 100nm fully-depleted (FD) SOI CMOS devices with HfO<inf>2</inf>high-k gate dielectric considering vertical and fringing displacement effect. According to the 2D simulation results, a unique two-step C<inf>S(D)G</inf>/C<inf>GS</inf>versus V<inf>G</inf>curve exists for the device with the 1.5nm HfO<inf>2</inf>gate dielectric due to the vertical and fringing displacement effects.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635214\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635214","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文报道了考虑垂直位移效应和边缘位移效应的hfo2高k栅极介质的100nm满耗尽(FD) SOI CMOS器件的CGS(D)/CS(D) g电容现象。二维仿真结果表明，由于垂直位移和边缘位移效应，1.5nm hfo2栅极介质器件存在独特的两步CS(D)G/ cgsvs . vg曲线。
CGS(D)/CS(D)GCapacitance Phenomenon of 100nm Fully-Depleted SOI CMOS Devices with HfO2High-K Gate Dielectric Considering Vertical and Fringing Displacement Effects
This paper reports the CGS(D)/CS(D)Gcapacitance phenomenon of 100nm fully-depleted (FD) SOI CMOS devices with HfO2high-k gate dielectric considering vertical and fringing displacement effect. According to the 2D simulation results, a unique two-step CS(D)G/CGSversus VGcurve exists for the device with the 1.5nm HfO2gate dielectric due to the vertical and fringing displacement effects.
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