Mohamed Abdelwahab, M. Hameed, S. Azzam, S. Obayya
{"title":"基于SOI平台的CMOS兼容te通偏振器","authors":"Mohamed Abdelwahab, M. Hameed, S. Azzam, S. Obayya","doi":"10.1109/ROPACES.2016.7465405","DOIUrl":null,"url":null,"abstract":"In this paper, a compact TE pass polarizer based on silicon-on-insulator (SOI) is reported and analyzed. The suggested design depends on asymmetric silicon coupler to separate the two polarizing states and hence the required polarizing state can be obtained. The proposed SOI TE polarizer can achieve -16.15 dB extinction ratio and -0.67 dB insertion losses with compact device length of 4.5 μm. Further, the introduced device is easy for fabrication and is compatible with standard CMOS fabrication process.","PeriodicalId":101990,"journal":{"name":"2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"CMOS compatible TE-pass polarizer based on SOI platform\",\"authors\":\"Mohamed Abdelwahab, M. Hameed, S. Azzam, S. Obayya\",\"doi\":\"10.1109/ROPACES.2016.7465405\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a compact TE pass polarizer based on silicon-on-insulator (SOI) is reported and analyzed. The suggested design depends on asymmetric silicon coupler to separate the two polarizing states and hence the required polarizing state can be obtained. The proposed SOI TE polarizer can achieve -16.15 dB extinction ratio and -0.67 dB insertion losses with compact device length of 4.5 μm. Further, the introduced device is easy for fabrication and is compatible with standard CMOS fabrication process.\",\"PeriodicalId\":101990,\"journal\":{\"name\":\"2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ROPACES.2016.7465405\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ROPACES.2016.7465405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS compatible TE-pass polarizer based on SOI platform
In this paper, a compact TE pass polarizer based on silicon-on-insulator (SOI) is reported and analyzed. The suggested design depends on asymmetric silicon coupler to separate the two polarizing states and hence the required polarizing state can be obtained. The proposed SOI TE polarizer can achieve -16.15 dB extinction ratio and -0.67 dB insertion losses with compact device length of 4.5 μm. Further, the introduced device is easy for fabrication and is compatible with standard CMOS fabrication process.
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