低温低噪声InP MMIC工艺优化

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978542

P. Nilsson, J. Schleeh, N. Wadefalk, J. P. Starski, H. Rodilla, G. Alestig, J. Halonen, B. Nilsson, H. Zirath, J. Grahn

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引用次数: 1

摘要

开发并优化了低温下超低噪声放大器(LNAs)的InP MMIC工艺。该过程中的放大器工作频率高达100ghz。加工的晶圆为4英寸，可携带超过4000个3级单元。对于大量6-20 GHz的3级lna，我们在环境温度为10 K时测量到的平均噪声温度为5.8 K，这是该频率范围内最先进的水平，在300K时测量到的平均噪声温度为66.3 K。相关增益分别为35.9 dB (10K)和33.2 dB (300k)， 47个LNAs的室温标准差分别为1.5 K和0.3 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An InP MMIC Process Optimized for Low Noise at Cryo

An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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