{"title":"mos门控PNPN二极管用于硬件尖峰神经网络的可变性评估","authors":"Toshihiro Takada, Takayuki Mori, J. Ida","doi":"10.1109/ICMTS55420.2023.10094054","DOIUrl":null,"url":null,"abstract":"The variability of the neuronal function device of a metal oxide semiconductor-gated PNPN diode was evaluated. The variability of neurons is known to affect the inference accuracy of spiking neural networks (SNNs). The device has stochastic operation on its own, and the spike frequency can be controlled by the gate voltage, which has the possibility to improve the accuracy of SNNs.","PeriodicalId":275144,"journal":{"name":"2023 35th International Conference on Microelectronic Test Structure (ICMTS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Variability Evaluation of MOS-gated PNPN Diode for Hardware Spiking Neural Network\",\"authors\":\"Toshihiro Takada, Takayuki Mori, J. Ida\",\"doi\":\"10.1109/ICMTS55420.2023.10094054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The variability of the neuronal function device of a metal oxide semiconductor-gated PNPN diode was evaluated. The variability of neurons is known to affect the inference accuracy of spiking neural networks (SNNs). The device has stochastic operation on its own, and the spike frequency can be controlled by the gate voltage, which has the possibility to improve the accuracy of SNNs.\",\"PeriodicalId\":275144,\"journal\":{\"name\":\"2023 35th International Conference on Microelectronic Test Structure (ICMTS)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 35th International Conference on Microelectronic Test Structure (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS55420.2023.10094054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Conference on Microelectronic Test Structure (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS55420.2023.10094054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Variability Evaluation of MOS-gated PNPN Diode for Hardware Spiking Neural Network
The variability of the neuronal function device of a metal oxide semiconductor-gated PNPN diode was evaluated. The variability of neurons is known to affect the inference accuracy of spiking neural networks (SNNs). The device has stochastic operation on its own, and the spike frequency can be controlled by the gate voltage, which has the possibility to improve the accuracy of SNNs.