BGA结构缺陷和焊点缺陷的三维x射线层析测定

T. Moore, D. Vanderstraeten, P. Forssell
{"title":"BGA结构缺陷和焊点缺陷的三维x射线层析测定","authors":"T. Moore, D. Vanderstraeten, P. Forssell","doi":"10.1109/IPFA.2001.941474","DOIUrl":null,"url":null,"abstract":"The equipment and software for X-ray laminography has advanced rapidly in recent years. The latest systems can distinguish features as small as 5 /spl mu/m in diameter and identify their locations to within 10 /spl mu/m in three dimensions within an IC package. Details of complex closely spaced structures can be extracted readily with recently developed microlaminographs. At this resolution, the method is termed microlaminography. In this paper, the technology, methodology and results from a microlaminography system developed for failure analysis in IC packaging are presented. The copper traces in the built up layers of a BGA substrate were extracted and analysed individually. Bond-wire shorts in the plane of the solder resist in a lot of BGA assemblies were located and identified with subsequent verification by destructive physical analysis (DPA). 3D reconstructions of individual solder balls within an assembly were created and examined for defects. These analyses could not have been done by normal 2D X-ray; formerly only DPA could extract such information.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Determination of BGA structural defects and solder joint defects by 3D X-ray laminography\",\"authors\":\"T. Moore, D. Vanderstraeten, P. Forssell\",\"doi\":\"10.1109/IPFA.2001.941474\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The equipment and software for X-ray laminography has advanced rapidly in recent years. The latest systems can distinguish features as small as 5 /spl mu/m in diameter and identify their locations to within 10 /spl mu/m in three dimensions within an IC package. Details of complex closely spaced structures can be extracted readily with recently developed microlaminographs. At this resolution, the method is termed microlaminography. In this paper, the technology, methodology and results from a microlaminography system developed for failure analysis in IC packaging are presented. The copper traces in the built up layers of a BGA substrate were extracted and analysed individually. Bond-wire shorts in the plane of the solder resist in a lot of BGA assemblies were located and identified with subsequent verification by destructive physical analysis (DPA). 3D reconstructions of individual solder balls within an assembly were created and examined for defects. These analyses could not have been done by normal 2D X-ray; formerly only DPA could extract such information.\",\"PeriodicalId\":297053,\"journal\":{\"name\":\"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2001.941474\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2001.941474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

近年来,x射线层析成像的设备和软件发展迅速。最新的系统可以在IC封装中识别直径小至5 /spl μ m的特征,并在10 /spl μ m的三维空间内识别它们的位置。复杂的紧密间隔结构的细节可以很容易地提取与最近发展的显微层析成像。在这种分辨率下,这种方法被称为显微层析。本文介绍了用于IC封装失效分析的微层析系统的技术、方法和结果。在BGA衬底的建立层中的铜痕迹被单独提取和分析。通过破坏性物理分析(DPA)对许多BGA组件中焊阻平面上的焊线短路进行了定位和识别。在组装中创建和检查单个焊料球的3D重建并检查缺陷。这些分析不能通过普通的二维x射线完成;以前只有DPA可以提取这类信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Determination of BGA structural defects and solder joint defects by 3D X-ray laminography
The equipment and software for X-ray laminography has advanced rapidly in recent years. The latest systems can distinguish features as small as 5 /spl mu/m in diameter and identify their locations to within 10 /spl mu/m in three dimensions within an IC package. Details of complex closely spaced structures can be extracted readily with recently developed microlaminographs. At this resolution, the method is termed microlaminography. In this paper, the technology, methodology and results from a microlaminography system developed for failure analysis in IC packaging are presented. The copper traces in the built up layers of a BGA substrate were extracted and analysed individually. Bond-wire shorts in the plane of the solder resist in a lot of BGA assemblies were located and identified with subsequent verification by destructive physical analysis (DPA). 3D reconstructions of individual solder balls within an assembly were created and examined for defects. These analyses could not have been done by normal 2D X-ray; formerly only DPA could extract such information.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Software aided failure analysis using ATPG tool Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs Single contact optical beam induced currents (SCOBIC)-technique and applications Failure analysis challenges
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1