高密度64M FeRAM及以上的关键工艺技术

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393153

K. Yamakawa, T. Ozaki, H. Kanaya, I. Kunishima, Y. Kumura, Y. Shimojo, S. Shuto, O. Hidaka, Yuki Yamada, S. Yamazaki, S. Shiratake, D. Takashima, T. Miyakawa, S. Ohtsuki, T. Hamamoto

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引用次数: 0

摘要

用亚微米铁电电容器实现高密度feram的困难是众所周知的，因为电容器的损坏。介绍了采用亚微米高可靠性PZT电容器的64M feram的高质量铁电薄膜沉积、电极制备、电容器RIE和氢势垒结构形成等关键工艺技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Key process technology for high density 64M FeRAM and beyond

Difficulty to achieve high density FeRAMs with sub-micron ferroelectric capacitors is widely understood due to damage to the capacitors. Key process techniques such as high quality ferroelectric film deposition, electrode preparation, capacitor RIE and hydrogen barrier structure formation are introduced for 64M FeRAMs with sub micron high reliability PZT capacitors.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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