{"title":"用单壁碳纳米管制备互补单电子逆变器","authors":"D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi","doi":"10.1109/DRC.2004.1367781","DOIUrl":null,"url":null,"abstract":"Single-electron devices (SEDs) based on Coulomb blockade (CB) effects have prominent features in terms of ultra-low power consumption and miniaturization to a molecular scale. The performance of the device gets better as the dot size gets small because they rely on the classical CB effect. The single-wall carbon nanotube (SWNT) is attractive material as a building block of SEDs because of the extremely small diameter of a few nanometers. In this paper, we report on the fabrication of the complimentary single-electron inverter an elemental device for the single electron logic (J.R. Tucker, J. Appl. Phys. vol. 72, p. 4399, 1992), and show the electrical performance in the temperature range from 1.5 K to 10 K.","PeriodicalId":385948,"journal":{"name":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of complimentary single-electron inverter in single-wall carbon nanotubes\",\"authors\":\"D. Tsuya, M. Suzuki, Y. Aoyagi, K. Ishibashi\",\"doi\":\"10.1109/DRC.2004.1367781\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-electron devices (SEDs) based on Coulomb blockade (CB) effects have prominent features in terms of ultra-low power consumption and miniaturization to a molecular scale. The performance of the device gets better as the dot size gets small because they rely on the classical CB effect. The single-wall carbon nanotube (SWNT) is attractive material as a building block of SEDs because of the extremely small diameter of a few nanometers. In this paper, we report on the fabrication of the complimentary single-electron inverter an elemental device for the single electron logic (J.R. Tucker, J. Appl. Phys. vol. 72, p. 4399, 1992), and show the electrical performance in the temperature range from 1.5 K to 10 K.\",\"PeriodicalId\":385948,\"journal\":{\"name\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2004.1367781\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2004.1367781","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
基于库仑阻断效应的单电子器件(SEDs)具有超低功耗和分子小型化的突出特点。由于依赖于经典的CB效应,器件的性能随着点尺寸的减小而提高。单壁碳纳米管(SWNT)由于其直径极小,只有几纳米,是一种极具吸引力的材料。在本文中,我们报道了互补单电子逆变器的制造,这是一种用于单电子逻辑的基本器件。理论物理。vol. 72, p. 4399, 1992),并显示在1.5 K至10 K的温度范围内的电气性能。
Fabrication of complimentary single-electron inverter in single-wall carbon nanotubes
Single-electron devices (SEDs) based on Coulomb blockade (CB) effects have prominent features in terms of ultra-low power consumption and miniaturization to a molecular scale. The performance of the device gets better as the dot size gets small because they rely on the classical CB effect. The single-wall carbon nanotube (SWNT) is attractive material as a building block of SEDs because of the extremely small diameter of a few nanometers. In this paper, we report on the fabrication of the complimentary single-electron inverter an elemental device for the single electron logic (J.R. Tucker, J. Appl. Phys. vol. 72, p. 4399, 1992), and show the electrical performance in the temperature range from 1.5 K to 10 K.