基于90nm CMOS工艺的无线传感器网络低功耗全定制1kb 8T同步SRAM的开发

Syre Aires Destiny V. Jacinto, Allona Jane M. Nanoz, Justine Roy A. Punzalan, Francis A. Malabanan, Adonis S. Santos, J. Tabing, Sherryl M. Gevana
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引用次数: 1

摘要

无休止的环境退化的后果给个人带来了包括气候变化在内的许多风险。现代技术通过物联网(IoT)和使用片上系统(soc)(如环境传感器平台)解决了更有能力的环境监测需求。SoC的关键组件之一是随机存取存储器(RAM),它的功耗占相当大的一部分。这使得内存不适用于能源受限的应用程序,如环境监测。本研究的目的是开发用于传感器平台的低功耗全定制8T SRAM。评估了不同的SRAM拓扑结构,以确定哪种拓扑结构具有最低的功耗。通过仿真验证,在90nm CMOS工艺下设计了一个具有完整功能的数据读写电路。采用Synopsys设计工具对每个模块进行布局,通过消除感测放大器和预充电电路,功耗为21.0405mW,静态噪声裕度为520mV。该研究显著降低了存储器的功耗,适用于环境监测应用。
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Development of Low Power Full-Custom 1 Kb 8T Synchronous SRAM for Wireless Sensor Network in 90nm CMOS Process Technology
The aftermath of endless environmental degradation poses a lot of risk among individuals including climate change. Modern technology addresses the need of a more competent environmental monitoring through Internet of Things (IoT) and the use of System-on-Chips (SoCs) such as Environmental Sensor Platform. One of the critical components of SoC is a Random Access Memory (RAM) which presents a sizable fraction of power consumption. This makes memory inappropriate for energy-constrained applications such as environmental monitoring. The purpose of this study is the development of low power full-custom 8T SRAM for sensor platforms. Different SRAM topologies were evaluated to identify which among has the lowest power consumption. Verified through simulations, a fully functioning schematic that can read and write data were designed in 90nm CMOS process technology. Layout of each block were created using Synopsys design tools yielding power consumption of 21.0405mW and static noise margin of 520mV achieved by eliminating sense amplifier and pre- charge circuits. This study significantly reduced power consumption of memory which is suitable for environmental monitoring applications.
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