一款0.1 mm2 3通道面积优化ΣΔ ADC,采用0.16µm CMOS, BW为20 khz, DR为86 db

F. Sebastiano, R. V. Veldhoven
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引用次数: 16

摘要

汽车传感器的前端必须以高分辨率数字化多通道,同时尽量减少其硅面积以节省成本。信道延迟和信道间增益失配必须最小化,以便能够使用相同的前端服务于从ABS到动力转向的多个传感器应用。所提出的ΣΔ ADC同时数字化3个通道,每个通道使用75 mhz时钟,在20 khz BW上具有86 dB的DR。通道延迟< 40ns,通道间增益失配< 0.2%。ADC采用0.16 μm CMOS工艺,占地面积仅为0.1 mm2。小面积是通过通道多路复用实现的,允许在通道之间共享组件,并通过大过采样比(OSR)实现,允许更小的电容器。
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A 0.1-mm2 3-channel area-optimized ΣΔ ADC in 0.16-µm CMOS with 20-kHz BW and 86-dB DR
Front-ends for automotive sensors must digitize multiple channels with high resolution while minimizing their silicon area to save costs. Both channel latency and inter-channel gain mismatch must be minimized to be able to serve multiple sensor applications, ranging from ABS to power steering, with the same front-end. The proposed ΣΔ ADC simultaneously digitizes 3 channels, each with a DR of 86 dB over a 20-kHz BW using a 75-MHz clock. Channel latency is <;40 ns and inter-channel gain mismatch is <;0.2%. The ADC occupies only 0.1 mm2 in a 0.16-μm CMOS process. The small area is enabled by channel multiplexing, allowing component sharing among the channels, and by the large oversampling ratio (OSR), allowing for smaller capacitors.
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