利用微波退火技术改善SiGeAsTe卵泡阈值开关(OTS)特性，使其具有优异的续航时间(> 1011)和低漂移特性

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830179

J. Lee, S. Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, O. Mosendz, H. Hwang

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引用次数: 2

摘要

为了提高纳米(d=30 nm)卵子阈值开关(OTS)选择器的可靠性，我们首次报道了微波退火(MWA)对OTS器件电特性的影响。经MWA处理的OTS器件具有较低的初始成形电压、良好的耐磨性(> 1011)和较低的阈值电压(Vth)漂移(~ 67%)，同时保持了良好的开关特性(Ioff = 0.8 nA, at 1.1 V)。通过拉曼光谱和密度泛函理论(DFT)计算证实，MWA处理后的As-Te键合概率增强，可以解释低成形电压和提高器件可靠性的原因。

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Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics

To improve the reliability of a nanoscale (d=30 nm) ovonic threshold switching (OTS) selector, we report for the first time the effect of microwave annealing (MWA) on the electrical characteristics of an OTS device. The MWA-treated OTS device shows low initial forming voltage, excellent endurance (> 1011), and reduced threshold voltage (Vth) drift (~ 67 %), while maintaining its great switching characteristics (Ioff = 0.8 nA at 1.1 V). Enhanced As-Te bonding probability after MWA, which was confirmed by Raman spectroscopy and density functional theory (DFT) calculations, can explain low forming voltage and improved device reliability.

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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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