J.F. Zhang, H. K. Sii, G. Groeseneken, R. Degraeve
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引用次数: 2
摘要
氧化物击穿是未来CMOS技术的潜在亮点。缺陷的产生是造成故障的原因。以前的工作(Degraeve et al.， 2000;Stathis and DiMaria, 1999;Zhang et al .， 1992)的研究重点是电子陷阱的产生，而空穴陷阱的产生信息较少。这篇论文明确地表明，大量的空穴陷阱是可以被创造出来的。
Oxide breakdown is a potential showstopper for future CMOS technology. Defect generation is responsible for the breakdown. Previous work (Degraeve et al., 2000; Stathis and DiMaria, 1999; Zhang et al, 1992) was focused on electron trap generation, while little information is available on hole trap generation. This paper unambiguously shows that a significant amount of hole traps can be created.
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