Ahmed T. Elthakeb, H. A. Elhamid, H. Mostafa, Y. Ismail
{"title":"统计VT变异性下基于finFET的SRAM性能评价","authors":"Ahmed T. Elthakeb, H. A. Elhamid, H. Mostafa, Y. Ismail","doi":"10.1109/ICM.2014.7071813","DOIUrl":null,"url":null,"abstract":"FinFET devices are the most promising solutions for further technology scaling in the long term projections of the ITRS. The performance of extremely scaled FinFET-based 256-bit (6T) SRAM is evaluated with technology scaling for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of threshold voltage variations on the delay, power, and stability is reported considering die-to-die variations. Significant performance degradation is found starting from the 10nm channel length and continues down to 7nm.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Performance evaluation of finFET based SRAM under statistical VT variability\",\"authors\":\"Ahmed T. Elthakeb, H. A. Elhamid, H. Mostafa, Y. Ismail\",\"doi\":\"10.1109/ICM.2014.7071813\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"FinFET devices are the most promising solutions for further technology scaling in the long term projections of the ITRS. The performance of extremely scaled FinFET-based 256-bit (6T) SRAM is evaluated with technology scaling for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of threshold voltage variations on the delay, power, and stability is reported considering die-to-die variations. Significant performance degradation is found starting from the 10nm channel length and continues down to 7nm.\",\"PeriodicalId\":107354,\"journal\":{\"name\":\"2014 26th International Conference on Microelectronics (ICM)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 26th International Conference on Microelectronics (ICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2014.7071813\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 26th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2014.7071813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance evaluation of finFET based SRAM under statistical VT variability
FinFET devices are the most promising solutions for further technology scaling in the long term projections of the ITRS. The performance of extremely scaled FinFET-based 256-bit (6T) SRAM is evaluated with technology scaling for channel lengths of 20nm down to 7nm showing the scaling trends of basic performance metrics. In addition, the impact of threshold voltage variations on the delay, power, and stability is reported considering die-to-die variations. Significant performance degradation is found starting from the 10nm channel length and continues down to 7nm.
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