隧道晶体管技术的应用领域评估

2015 Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2015-11-01 DOI:10.1109/DCIS.2015.7388581

M. Avedillo, J. Núñez

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引用次数: 2

摘要

隧道晶体管是目前研究的最具吸引力的陡峭亚阈值斜率器件之一，用于克服CMOS技术的功率密度和能量低效率限制。本文对投射隧道晶体管技术在不同应用领域的功率和能量进行了评估，并与LP和HP版本的传统和FinFET CMOS进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Assessing application areas for tunnel transistor technologies

Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of CMOS technology. In this paper, projected tunnel transistor technologies are evaluated and compared to LP and HP versions of both conventional and FinFET CMOS in terms of their power and energy in different application areas.

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2015 Conference on Design of Circuits and Integrated Systems (DCIS)

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