A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar
{"title":"电力器件快速三维TCAD电热仿真的先进方法","authors":"A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar","doi":"10.1109/ASDAM.2014.6998711","DOIUrl":null,"url":null,"abstract":"In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and illustrated. A power MOSFET under an unclamped inductive switching (UIS) test of the device robustness is used to perform validation of the designed electrothermal simulation. The presented simulation approach contributes to full analysis of complex structures at high speed of simulation and simplicity of implementation. The methodology is developed for co-simulation platform SMAC.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices\",\"authors\":\"A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar\",\"doi\":\"10.1109/ASDAM.2014.6998711\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and illustrated. A power MOSFET under an unclamped inductive switching (UIS) test of the device robustness is used to perform validation of the designed electrothermal simulation. The presented simulation approach contributes to full analysis of complex structures at high speed of simulation and simplicity of implementation. The methodology is developed for co-simulation platform SMAC.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998711\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices
In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and illustrated. A power MOSFET under an unclamped inductive switching (UIS) test of the device robustness is used to perform validation of the designed electrothermal simulation. The presented simulation approach contributes to full analysis of complex structures at high speed of simulation and simplicity of implementation. The methodology is developed for co-simulation platform SMAC.
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