{"title":"神经形态应用中氧化物忆阻器的建模与实现","authors":"Ting Chang, P. Sheridan, W. Lu","doi":"10.1109/CNNA.2012.6331462","DOIUrl":null,"url":null,"abstract":"We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.","PeriodicalId":387536,"journal":{"name":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Modeling and implementation of oxide memristors for neuromorphic applications\",\"authors\":\"Ting Chang, P. Sheridan, W. Lu\",\"doi\":\"10.1109/CNNA.2012.6331462\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.\",\"PeriodicalId\":387536,\"journal\":{\"name\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CNNA.2012.6331462\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.2012.6331462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling and implementation of oxide memristors for neuromorphic applications
We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.
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