Pei-Yu Wu, Xin-Ying Tsai, T. Chang, T. Tsai, S. Sze
{"title":"热载流子降解条件下Al2O3和Si3N4栅极绝缘子gan基miss - hemts特性的比较研究","authors":"Pei-Yu Wu, Xin-Ying Tsai, T. Chang, T. Tsai, S. Sze","doi":"10.1109/ICMTS55420.2023.10094072","DOIUrl":null,"url":null,"abstract":"In GaN-based metal-insulatorsemiconductor high electron mobility transistors (GaNbased MIS HEMTs), Al2O3/Si3N4 bilayer-gate insulator- MIS HEMTs (Al2O3/Si3N4-MIS HEMTs) are considered to have the advantages of low gate leakage and low interface defects. This study will compare Si3N4 gate insulator-MIS HEMTs (Si3N4-MIS HEMTs) to discuss and clarify the abnormal deterioration mechanism of Al2O3/Si3N4-MIS HEMTs under Hot Carrier Effect (HCE). Therefore, in this study, the results of HCE between Si3N4-MIS HEMTs and Al2O3/Si3N4-MIS HEMTs are compared, and the abnormal HCS degradations in Al2O3/Si3N4-MIS HEMTs are discussed and explained in depth. A series of electrical and simulation analysis is conducted in order to verify the degradation mechanism model proposed in this study.","PeriodicalId":275144,"journal":{"name":"2023 35th International Conference on Microelectronic Test Structure (ICMTS)","volume":"365 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation\",\"authors\":\"Pei-Yu Wu, Xin-Ying Tsai, T. Chang, T. Tsai, S. Sze\",\"doi\":\"10.1109/ICMTS55420.2023.10094072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In GaN-based metal-insulatorsemiconductor high electron mobility transistors (GaNbased MIS HEMTs), Al2O3/Si3N4 bilayer-gate insulator- MIS HEMTs (Al2O3/Si3N4-MIS HEMTs) are considered to have the advantages of low gate leakage and low interface defects. This study will compare Si3N4 gate insulator-MIS HEMTs (Si3N4-MIS HEMTs) to discuss and clarify the abnormal deterioration mechanism of Al2O3/Si3N4-MIS HEMTs under Hot Carrier Effect (HCE). Therefore, in this study, the results of HCE between Si3N4-MIS HEMTs and Al2O3/Si3N4-MIS HEMTs are compared, and the abnormal HCS degradations in Al2O3/Si3N4-MIS HEMTs are discussed and explained in depth. A series of electrical and simulation analysis is conducted in order to verify the degradation mechanism model proposed in this study.\",\"PeriodicalId\":275144,\"journal\":{\"name\":\"2023 35th International Conference on Microelectronic Test Structure (ICMTS)\",\"volume\":\"365 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 35th International Conference on Microelectronic Test Structure (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS55420.2023.10094072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Conference on Microelectronic Test Structure (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS55420.2023.10094072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在氮化镓基金属绝缘体半导体高电子迁移率晶体管(GaN-based MIS HEMTs)中,Al2O3/Si3N4双层栅绝缘体-MIS HEMTs (Al2O3/Si3N4-MIS HEMTs)被认为具有低栅漏和低界面缺陷的优点。本研究将比较Si3N4栅极绝缘子- mis HEMTs (Si3N4- mis HEMTs),探讨和阐明Al2O3/Si3N4- mis HEMTs在热载子效应(HCE)下的异常劣化机理。因此,本研究比较了Si3N4-MIS HEMTs和Al2O3/Si3N4-MIS HEMTs的HCE结果,并对Al2O3/Si3N4-MIS HEMTs中HCS的异常降解进行了深入的讨论和解释。为了验证本文提出的退化机理模型,进行了一系列的电气分析和仿真分析。
Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation
In GaN-based metal-insulatorsemiconductor high electron mobility transistors (GaNbased MIS HEMTs), Al2O3/Si3N4 bilayer-gate insulator- MIS HEMTs (Al2O3/Si3N4-MIS HEMTs) are considered to have the advantages of low gate leakage and low interface defects. This study will compare Si3N4 gate insulator-MIS HEMTs (Si3N4-MIS HEMTs) to discuss and clarify the abnormal deterioration mechanism of Al2O3/Si3N4-MIS HEMTs under Hot Carrier Effect (HCE). Therefore, in this study, the results of HCE between Si3N4-MIS HEMTs and Al2O3/Si3N4-MIS HEMTs are compared, and the abnormal HCS degradations in Al2O3/Si3N4-MIS HEMTs are discussed and explained in depth. A series of electrical and simulation analysis is conducted in order to verify the degradation mechanism model proposed in this study.