模拟输入跃迁的时间接近对门传播延迟和跃迁时间的影响

V. Chandramouli, K. Sakallah
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引用次数: 50

摘要

虽然具有单一开关输入的门的延迟建模已经受到了相当大的关注,但在近时间接近的情况下,多输入开关的情况才刚刚开始在文献中得到解决。输入跃迁的接近性对延迟和输出跃迁时间的影响是显著的。解决这个问题的少数尝试是基于串并联晶体管折叠方法,该方法减少了逆变器的多输入门。这限制了该技术的CMOS技术。此外,它们都没有讨论适当选择电压阈值来测量多输入门的延迟。在本文中,我们首先提出了一种选择多输入门电压阈值的方法,以确保在所有输入条件下延时都为正值。接下来,我们介绍了一个双输入接近模型,用于只有两个门的输入开关的情况。然后,我们提出了一种简单的近似算法来计算延迟和输出过渡时间,该算法可以重复使用双输入接近模型,而不会将栅极折叠成等效逆变器。与仿真结果的比较表明,该方法在实际应用中具有较好的效果。
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Modeling the effects of temporal proximity of input transitions on gate propagation delay and transition time
While delay modeling of gates with a single switching input has received considerable attention, the case of multiple inputs switching in close temporal proximity is just beginning to be addressed in the literature. The effect of proximity of input transitions can be significant on the delay and output transition time. The few attempts that have addressed this issue are based on a series-parallel transistor collapsing method that reduces the multi-input gate to an inverter. This limits the technique to CMOS technology. Moreover, none of them discuss the appropriate choice of voltage thresholds to measure delay for a multi-input gate. In this paper, we first present a method for the choice of voltage thresholds for a multi-input gate that ensures a positive value of delay under all input conditions. We next introduce a dual-input proximity model for the case when only two inputs of the gate are switching. We then propose a simple approximate algorithm for calculating the delay and output transition time that makes repeated use of the dual-input proximity model without collapsing the gate into an equivalent inverter. Comparison with simulation results shows that our method performs quite well in practice.
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