{"title":"高性能宽带和中频段功率放大器mmic","authors":"T. Apel, R. Bhatla, B. Lauterwasser","doi":"10.1109/GAAS.1993.394434","DOIUrl":null,"url":null,"abstract":"The authors describe two advanced MMIC power amplifiers covering the 6-18 GHz and 8-14.5 GHz bands. Both chips are based on a novel two section distributed amplifier structure that employs bandpass networks instead of the conventional lowpass image-parameter networks. A new matrix amplifier structure is also used in the first stage of the 8-14.5 GHz PA. Bias networks are fully integrated to allow automated assembly. Significant milestones in wideband power and efficiency have been achieved.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High performance wide-band and medium-band power amplifier MMICs\",\"authors\":\"T. Apel, R. Bhatla, B. Lauterwasser\",\"doi\":\"10.1109/GAAS.1993.394434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe two advanced MMIC power amplifiers covering the 6-18 GHz and 8-14.5 GHz bands. Both chips are based on a novel two section distributed amplifier structure that employs bandpass networks instead of the conventional lowpass image-parameter networks. A new matrix amplifier structure is also used in the first stage of the 8-14.5 GHz PA. Bias networks are fully integrated to allow automated assembly. Significant milestones in wideband power and efficiency have been achieved.<<ETX>>\",\"PeriodicalId\":347339,\"journal\":{\"name\":\"15th Annual GaAs IC Symposium\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"15th Annual GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1993.394434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance wide-band and medium-band power amplifier MMICs
The authors describe two advanced MMIC power amplifiers covering the 6-18 GHz and 8-14.5 GHz bands. Both chips are based on a novel two section distributed amplifier structure that employs bandpass networks instead of the conventional lowpass image-parameter networks. A new matrix amplifier structure is also used in the first stage of the 8-14.5 GHz PA. Bias networks are fully integrated to allow automated assembly. Significant milestones in wideband power and efficiency have been achieved.<>
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