行为模型复杂性需求的系统研究

M. Rocio Moure, M. Casbon, M. Fernández-Barciela, P. Tasker
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引用次数: 4

摘要

在功率放大器的设计中,有必要对晶体管在高压缩水平下的行为进行建模,并准确预测负载-拉功率和效率轮廓以及谐波。为此,非线性行为模型方法已被成功地使用,如卡迪夫模型。在本文中,系统地研究了针对GaN HFET的不同负载-拉力轮廓设计要求时,Cardiff模型达到给定精度所需的复杂性。该研究通过模拟和测量进行,旨在提供一种系统的方法来帮助提取准确有效的卡迪夫行为模型。
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A Systematic Investigation of Behavioural Model Complexity Requirements
In the design of power amplifiers, it is necessary to model the transistor behaviour at high compression levels and accurately predict load-pull power and efficiency contours as well as harmonics. For this purpose, nonlinear behavioural model approaches have been successfully used, like Cardiff model. In this paper, a systematic study is presented on the complexity required for the Cardiff model to achieve a given precision when targeting different load-pull contour design requirements for a GaN HFET. The study has been performed through simulation and measurements and is aimed at providing a systematic approach to aid in the extraction of accurate and efficient Cardiff behavioural models.
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