利用实现的MOS晶体管研究pH-ISFET温度效应

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706636

I. Humenyuk, S. Palomar, D. Lagrange, S. Assié, B. Franck, P. Marcoul, D. Medale, A. Martinez, P. Temple-Boyer

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引用次数: 1

摘要

本文研究了基于mos的传感器在饱和区域的温度行为。将MOSFET晶体管与N-pH-ISFET集成在一起，用作温度传感器以减小ISFET的温度效应。实时研究了MOSFET和ph - isfet晶体管的阈值电压随温度变化的变化。结果表明使用MOSFET晶体管作为温度传感器，并能够理解温度对使用FPGA信号采集系统的pH-ISFET响应的影响

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Study On pH-ISFET Temperature Effect Using Implemented MOS Transistor

This paper deals with the investigation of the temperature behavior of MOS-based sensors operating in the saturation region. A MOSFET transistor was integrated together with an N-pH-ISFET and used as temperature sensor to reduce the ISFET's temperature effect. The threshold voltage shifts of the MOSFET and pH-ISFETs transistors with temperature variations have been studied in real time. A result demonstrate the use of the MOSFET transistors as a temperature sensor and enables the understanding of the temperature influence on the pH-ISFET response using a FPGA signal acquisition system

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Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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