硅纳米线径向传热的分子动力学模拟

I. Bejenari, A. Burenkov, P. Pichler, I. Deretzis, A. La Magna
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引用次数: 2

摘要

利用非平衡态分子动力学模拟研究了嵌入非晶二氧化硅的硅纳米线径向热输运。为了比较,我们还考虑了轴向传热。对于半径为2.6 nm的Si纳米线,径向导热系数和轴向导热系数与SiO2厚度(1 ~ 3 nm)无关。硅芯的径向导热系数与覆盖SiO2材料的径向导热系数相似,几乎等于1 $W\cdot K^{-1}\cdot m^{-1}$。均匀加热的纳米线径向传热的热阻比轴向传热的热阻低3 ~ 4倍。
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Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires
Thermal transport in radial direction in Si nanowires embedded into amorphous silicon dioxide has been studied using nonequilibrium molecular dynamics simulations. For comparison, we also considered the axial heat transfer. For Si nanowires with a radius of 2.6 nm, both radial and axial thermal conductivities were found to be about independent of the SiO2 thickness ranging from 1 nm to 3 nm. The radial thermal conductivity of the Si core and of the covering SiO2 material are similar and nearly equal to 1 $W\cdot K^{-1}\cdot m^{-1}$. Thermal resistances for the heat transfer from uniformly heated nanowires in radial direction are by a factor of 3 to 4 lower than those for the heat transfer in axial direction.
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