利用广义Ramo-Shockley定理对短半导体器件的终端电流进行精确蒙特卡罗建模

P. Houlet, Y. Awano, N. Yokoyama, C. Hamaguchi
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引用次数: 3

摘要

本文利用Ramo-Shockley定理的广义公式,提出了一种有效而简单的方法,用于在集合蒙特卡罗模型中计算多端口器件中随时间变化的终端电流,包括位移电流和每种粒子类型的单独贡献。此外,我们的技术针对云单元和盒集成框架进行了优化。我们强调我们的公式不需要任何额外的优化理论,易于实现,并且不会增加CPU时间消耗。
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Accurate Monte Carlo modeling of terminal currents in short semiconductor devices by using a generalized Ramo-Shockley theorem
The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.
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