G. Loechelt, G. Grivna, L. Golonka, C. Hoggatt, H. Massie, F. De Pestel, N. Martens, S. Mouhoubi, J. Roig, T. Colpaert, P. Coppens, F. Bauwens, E. De Backer
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A high-speed silicon FET for efficient DC-DC power conversion
A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1-5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good on-state resistance and off-state breakdown voltage. Power efficiencies in excess of 88% were realized in a synchronous buck converter running at 1.3 MHz.
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