基于全带结构的Si和SiGe中电子和空穴霍尔因子和输运系数的有效评估方法

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1998-10-19 DOI:10.1109/IWCE.1998.742721

C. Jungemann, M. Bartels, S. Keith, B. Meinerzhagen

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引用次数: 8

摘要

提出了一种方法，可以有效地计算平衡和近平衡输运性质，并结合非局部经验伪势方法评估全带结构。这些方法不仅适用于输运参数的标定，也可用于水动力模型输运系数的提取。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure

Methods are presented, which allow the efficient calculation of equilibrium and near-equilibrium transport properties in conjunction with an full band structure evaluated by a nonlocal empirical pseudopotential method. These methods are not only applied to the case of transport parameter calibration, but are also used for the extraction of transport coefficients for hydrodynamic models.

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1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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