无掺杂栅堆隧道场效应管的直流和交流特性研究

Deepali Vasnik, M. Pattanaik
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引用次数: 1

摘要

提出了一种双栅极结构的无掺杂隧道场效应晶体管(GS-DLTFET)。FET的源极和漏极没有使用电荷等离子体的概念掺杂,这使得器件免于掺杂的随机波动问题。通过施加电介质层在栅极上形成多层结构。通过各种参数对器件进行分析,即对器件进行交流和直流仿真,研究器件的漏极电流特性。其中一个重要的因素,即温度变化的影响,也可以看到器件的各种参数。将分析结果与无掺杂隧道场效应晶体管(DLTFET)进行了比较,发现其性能更好。利用SILVACO ATLAS器件仿真软件对所提出的器件进行仿真,分析器件性能。
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Study of DC and AC characteristics of gate-stack doping-less tunnel FET
A double gated structure of Gate-Stack Doping-Less Tunnel Field Effect Transistor (GS-DLTFET) is proposed in this paper. Source and Drain regions of the FET are not doped using the charge plasma concept, which makes the device free from the random dopant fluctuation issue. A multi-layer structure is formed on the gate by imposing the layers of dielectrics. The device thus formed is analyzed by various parameters i.e., performing the AC and DC simulations on the device and studying the drain current characteristics of the device. One of the important factor i.e., effect of temperature variations are also seen on the various parameters of the device. The analyzed results are compared with the Doping-Less Tunnel Field Effect Transistor (DLTFET) and found to be better in performance. SILVACO ATLAS device simulator software has been used to carry out the simulations of the proposed device for analyzing the device performance.
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