D. Pantelica, G. Drafta, C. Borcan, D. Diaconescu, M. Buda, R. Ghiţă
{"title":"砷化镓上Au/Cr接触的RBS分析","authors":"D. Pantelica, G. Drafta, C. Borcan, D. Diaconescu, M. Buda, R. Ghiţă","doi":"10.1109/SMICND.1996.557406","DOIUrl":null,"url":null,"abstract":"This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical /spl alpha/ particles with /sup 7/Li ions. This allows a great improvement in depth and mass resolution.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"RBS analysis of Au/Cr contact on GaAs\",\"authors\":\"D. Pantelica, G. Drafta, C. Borcan, D. Diaconescu, M. Buda, R. Ghiţă\",\"doi\":\"10.1109/SMICND.1996.557406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical /spl alpha/ particles with /sup 7/Li ions. This allows a great improvement in depth and mass resolution.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical /spl alpha/ particles with /sup 7/Li ions. This allows a great improvement in depth and mass resolution.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
