{"title":"动态工作下n- mosfet热载子诱导光发射的研究","authors":"T. Ohzone, M. Yuzaki, T. Matsuda, E. Kameda","doi":"10.1109/ICMTS.2000.844408","DOIUrl":null,"url":null,"abstract":"Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total Photon Counts) were proportional to average drain and substrate currents under dynamic operation as observed under DC operation. TPC profiles of wide channel width MOSFETs, however, varied along the channel width direction under dynamic operation. It suggests that the substrate current distribution fluctuates along the channel width direction and affects the device lifetime.","PeriodicalId":447680,"journal":{"name":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A study on hot-carrier-induced photoemission in n-MOSFETs under dynamic operation\",\"authors\":\"T. Ohzone, M. Yuzaki, T. Matsuda, E. Kameda\",\"doi\":\"10.1109/ICMTS.2000.844408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total Photon Counts) were proportional to average drain and substrate currents under dynamic operation as observed under DC operation. TPC profiles of wide channel width MOSFETs, however, varied along the channel width direction under dynamic operation. It suggests that the substrate current distribution fluctuates along the channel width direction and affects the device lifetime.\",\"PeriodicalId\":447680,\"journal\":{\"name\":\"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2000.844408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2000.844408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study on hot-carrier-induced photoemission in n-MOSFETs under dynamic operation
Two dimensional photoemission profiles from n-MOSFETs supplying various pulse waveforms to the gate were measured and analyzed by a photoemission microscope. TPC (Total Photon Counts) were proportional to average drain and substrate currents under dynamic operation as observed under DC operation. TPC profiles of wide channel width MOSFETs, however, varied along the channel width direction under dynamic operation. It suggests that the substrate current distribution fluctuates along the channel width direction and affects the device lifetime.
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