偏靶沉积法控制稀土取代铁石榴石的化学成分

N. Krishnan, M. Martyniuk, R. Jeffery, R. Woodward, J. Dell, L. Faraone
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引用次数: 2

摘要

采用偏靶沉积(BTD)技术在熔融石英衬底上制备了稀土铈取代的铕铁石榴石(CeEu)3(FeGa)5O12 (Ce:EIG)及其单质氧化物。在低温(80 ~ 120℃)条件下,利用低能离子束同时溅射4个金属靶,制备了Ce:EIG薄膜。该方法通过控制单个目标上的偏置占空比,以可预测的方式控制材料成分。
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Control of chemical composition of rare-earth substituted iron garnets using biased target deposition
Rare earth cerium substituted europium iron garnets (CeEu)3(FeGa)5O12 (Ce:EIG) as well as the elemental oxides were deposited on fused quartz substrates using Biased Target Deposition (BTD). The Ce:EIG films are prepared at low temperature (80-120°C) by sputtering four metallic targets simultaneously using a low energy ion beam. This method provides control over the material composition in a predictable way by controlling the bias duty cycle on individual targets.
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