{"title":"AlGaN/GaN hemt的射频小信号和功率特性","authors":"A. Fox, M. Marso, P. Javorka, P. Kordos","doi":"10.1109/ASDAM.2002.1088527","DOIUrl":null,"url":null,"abstract":"S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies f/sub T/ and f/sub max/ increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"RF small-signal and power characterization of AlGaN/GaN HEMTs\",\"authors\":\"A. Fox, M. Marso, P. Javorka, P. Kordos\",\"doi\":\"10.1109/ASDAM.2002.1088527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies f/sub T/ and f/sub max/ increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088527\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF small-signal and power characterization of AlGaN/GaN HEMTs
S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies f/sub T/ and f/sub max/ increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.
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