利用0.15µm GaN MMIC技术实现ka波段高功率放大器的小型化

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2014-12-18 DOI:10.1109/CSICS.2014.6978569

K.K.-S. Kong, M. Kao, S. Nayak

{"title":"利用0.15µm GaN MMIC技术实现ka波段高功率放大器的小型化","authors":"K.K.-S. Kong, M. Kao, S. Nayak","doi":"10.1109/CSICS.2014.6978569","DOIUrl":null,"url":null,"abstract":"We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.","PeriodicalId":309722,"journal":{"name":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology\",\"authors\":\"K.K.-S. Kong, M. Kao, S. Nayak\",\"doi\":\"10.1109/CSICS.2014.6978569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.\",\"PeriodicalId\":309722,\"journal\":{\"name\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2014.6978569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2014.6978569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

我们采用0.15 μm GaN技术，设计了一种紧凑高效的ka波段高功率放大器，在30 GHz时输出功率为34.5dBm。本文报道了一种ka波段高功率放大器(HPA)级的记录压缩面积为2.38 mm^2。我们在50 μm厚的SiC衬底上采用0.15 μm GaN工艺，实现了高输出功率、高效率和紧凑的设计。通过与类似的GaAs功率放大器的比较，说明了GaN放大器在商用毫米波市场上的优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Miniaturization of Ka-Band High Power Amplifier by 0.15 µm GaN MMIC Technology

We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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