A. Šagátová, B. Zat’ko, K. Sedlačková, V. Nečas, M. Fulop
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Electron irradiation effects on the spectrometric characteristics of GaAs detectors
The spectrometric characteristics of semi-insulating GaAs detectors irradiated by 5 MeV electrons to a dose of 24 kGy at three different dose rates (20, 40 and 80kGy/h) were studied. A similar decrease of CCE (Charge Collection Efficiency) after irradiation by 7.5% of CCE was observed with all groups of investigated detectors. On the other hand, an increase of detection efficiency after irradiation was shown. The influence of the dose rate during irradiation on spectrometric properties of detectors was not proved in chosen range of dose rate.