用于高频应用的InP HEMT技术进展

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964334

P.M. Smith, K. Nichols, W. Kong, L. MtPleasant, D. Pritchard, R. Lender, J. Fisher, R. Actis, D. Dugas, D. Meharry, A. Swanson

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引用次数: 24

摘要

本文概述了用于高频模拟应用的InP HEMT器件和电路的快速发展。尽管迄今为止InP hemt的广泛使用受到其相对较高的成本的限制，但由于最近两个平行方面的进展-变质hemt (mhemt)的发展和InP基板的缩放到更大尺寸(4英寸和6英寸)，商业化现在似乎是不可避免的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advances in InP HEMT technology for high frequency applications

This paper presents an overview of the rapid progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Although widespread use of InP HEMTs has to date been limited by their comparatively high cost, commercialization now appears to be inevitable due to recent progress on two parallel fronts-the development of metamorphic HEMTs (MHEMTs) and the scaling of InP substrates to larger sizes (4- and 6-inch).

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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