晶圆晶片(CiW) -制程设计套件及在硅中间层中使用GaN晶片的高频电路演示

F. Herrault, J. Wong, I. Ramos, H. Tai, M. King
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引用次数: 2

摘要

用于微波集成电路的金属嵌入式芯片组装(MECAMIC)技术利用金属电镀嵌入方法将RF GaN晶体管芯片集成到无源中间体晶圆中。晶片内芯片(CiW)实现了晶体管芯片和封装电路之间的高度集成,从而实现了高射频性能。在本文中,我们介绍了详细的工艺流程,为毫米波射频集成电路(ic)开发的MECAMIC工艺设计套件(PDK),并将其应用于采用最先进的毫米波GaN晶体管芯片和低成本硅中间封装的异构集成多级w波段低噪声放大器(LNAs)的设计,仿真,制造和测量,该放大器在77 GHz时具有16 dB增益和4dB噪声系数。
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Chiplets in Wafers (CiW) - Process Design Kit and Demonstration of High-Frequency Circuits with GaN Chiplets in Silicon Interposers
The Metal Embedded Chiplet Assembly for Microwave Integrated Circuits (MECAMIC) technology utilizes RF GaN transistor chiplets integrated into passive interposer wafers using a metal electroplating embedding approach. Chiplets in Wafers (CiW) enable high level of integration between the transistor chiplets and the packaging circuitry, resulting in high RF performance. In this paper, we present the detailed process flow, the development of a MECAMIC Process Design Kit (PDK) for mm-wave RF Integrated Circuits (ICs), and its application to the design, simulation, fabrication and measurements of heterogeneously-integrated multi-stage W-band Low Noise Amplifiers (LNAs) using state-of-the-art mm-wave GaN transistor chiplets and low-cost silicon interposer packaging with 16 dB gain and 4dB noise figure at 77 GHz.
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