具有163 GHz f/sub T/和184 GHz f/sub max/的Cat-CVD SiN绝缘栅AlGaN/GaN hfet

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553161

M. Higashiwaki, T. Matsui, T. Mimura

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引用次数: 7

摘要

综上所述，我们利用薄的高铝成分势垒层、Cat-CVD SiN栅极绝缘和钝化层以及由EB光刻定义的60 nm t栅极，展示了fT=163 GHz和fmax=184 GHz的AlGaN/GaN hfet

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Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz f/sub T/ and 184 GHz f/sub max/

In conclusion, we demonstrated AlGaN/GaN HFETs with fT=163 GHz and fmax=184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography

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63rd Device Research Conference Digest, 2005. DRC '05.

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