随机线长模型与TSV放置在外围区域

Jianhui Ling, Huiyun Li, Guoqing Xu, Liying Xiong
{"title":"随机线长模型与TSV放置在外围区域","authors":"Jianhui Ling, Huiyun Li, Guoqing Xu, Liying Xiong","doi":"10.1109/EPTC.2014.7028291","DOIUrl":null,"url":null,"abstract":"Despite of numerous advantages of three dimensional integrated circuits (3D-ICs), their commercial success remains limited. The reason lies, in part, on the lack of physical design tools about Through-Silicon-Vias (TSVs) and 3D die stacking. In this paper, we propose a novel TSV placement method on the periphery of the dies. Based on this method, we derive a novel mathematical model to estimate 3D-IC wire-length and area with TSVs before floor-planning. We analyze the impact of TSVs on silicon area and wire-length. A case study with ISCAS benchmark circuits demonstrates that the proposed TSV placement method reduces the chip area and alleviates the reliability issues.","PeriodicalId":115713,"journal":{"name":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stochastic wire-length model with TSV placement on periphery area\",\"authors\":\"Jianhui Ling, Huiyun Li, Guoqing Xu, Liying Xiong\",\"doi\":\"10.1109/EPTC.2014.7028291\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Despite of numerous advantages of three dimensional integrated circuits (3D-ICs), their commercial success remains limited. The reason lies, in part, on the lack of physical design tools about Through-Silicon-Vias (TSVs) and 3D die stacking. In this paper, we propose a novel TSV placement method on the periphery of the dies. Based on this method, we derive a novel mathematical model to estimate 3D-IC wire-length and area with TSVs before floor-planning. We analyze the impact of TSVs on silicon area and wire-length. A case study with ISCAS benchmark circuits demonstrates that the proposed TSV placement method reduces the chip area and alleviates the reliability issues.\",\"PeriodicalId\":115713,\"journal\":{\"name\":\"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2014.7028291\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2014.7028291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

尽管三维集成电路(3d - ic)具有许多优点,但其商业成功仍然有限。部分原因在于缺乏关于硅通孔(tsv)和3D芯片堆叠的物理设计工具。在本文中,我们提出了一种新的在模具外围的TSV放置方法。在此基础上,我们推导了一种新的数学模型,用于在平面规划前用tsv估计3D-IC线长和面积。我们分析了tsv对硅面积和导线长度的影响。通过对ISCAS基准电路的实例研究表明,所提出的TSV放置方法减小了芯片面积,缓解了可靠性问题。
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Stochastic wire-length model with TSV placement on periphery area
Despite of numerous advantages of three dimensional integrated circuits (3D-ICs), their commercial success remains limited. The reason lies, in part, on the lack of physical design tools about Through-Silicon-Vias (TSVs) and 3D die stacking. In this paper, we propose a novel TSV placement method on the periphery of the dies. Based on this method, we derive a novel mathematical model to estimate 3D-IC wire-length and area with TSVs before floor-planning. We analyze the impact of TSVs on silicon area and wire-length. A case study with ISCAS benchmark circuits demonstrates that the proposed TSV placement method reduces the chip area and alleviates the reliability issues.
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