Jieun Lee, K. Doi, T. Hiratani, D. Inoue, T. Amemiya, N. Nishiyama, S. Arai
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High quality quantum-well intermixing for InP-based membrane photonic integration on Si
To realize membrane photonic integrated circuits, a novel quantum-well-intermixing (QWI) process using dual SiO2 films (O2-sputtered layer for enhancement of QWI and plasma-deposited layer for surface protection) was investigated. By optimization of the protection layer thickness, a large bandgap wavelength shift difference of 95 nm (57 meV) as well as good photoluminescence (PL) properties (no degradations in the PL spectral width and the intensity) was obtained. Moreover, the transient region length was estimated to be less than 3 μm which is the resolution limit of our PL measurement setup.
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