MSM波导光电探测器优化的单片集成与hemt

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303112

M. Leary, J. Ballantyne

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引用次数: 1

摘要

本文描述了两种与高电子迁移率晶体管具有相同层结构的MSM波导光电探测器的设计。这种设计使得这些探测器特别适合与OEIC中的hemt集成。在优化50 GHz探测器的内部检测效率时，考虑了电极表面的电阻损耗、入射到衬底的辐射损耗和散射损耗

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MSM waveguide photodetectors optimized for monolithic integration with HEMTs

The authors describe the design of two MSM waveguide photodetectors which share their layer structure with high electron mobility transistors. This design makes these detectors particularly suited to integration with HEMTs in OEIC's. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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