α-(AlxGa1-x)2O3/ α- ga2o3异质结构中能带偏移的表征

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528743

T. Uchida, R. Jinno, S. Takemoto, K. Kaneko, S. Fujita

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引用次数: 4

摘要

氧化镓是一种很有前途的功率器件材料。我们重点研究了刚玉结构的氧化镓(α- ga2o3)和α-(AlxGa1-x)2O3/ α- ga2o3异质结构器件。我们在c面蓝宝石衬底上制备了α-(AlxGa1-x)2O3合金及其层状结构。用x射线光电子能谱(XPS)测量了α- ga2o3 /α-(AlxGa1-x)2O3异质结构的能带偏移量。估计波段对准为I型，价带偏移能量非常窄。

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Characterization of band offset in α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructures

Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga₂O₃) and α-(Al_xGa_1-x)₂O₃/ α-Ga₂O₃ heterostructure devices. We prepared α-(Al_xGa_1-x)₂O₃ alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga₂O₃/α-(Al_xGa_1-x)₂O₃ heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The band alignment was estimated to be type I with very narrow valence-band offset energy.

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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