负电容通用存储器中程序/擦除速度和数据保留的权衡

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-12-29 DOI:10.23919/SNW.2017.8242317

C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang

{"title":"负电容通用存储器中程序/擦除速度和数据保留的权衡","authors":"C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang","doi":"10.23919/SNW.2017.8242317","DOIUrl":null,"url":null,"abstract":"In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Program/erase speed and data retention trade-off in negative capacitance versatile memory\",\"authors\":\"C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang\",\"doi\":\"10.23919/SNW.2017.8242317\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242317\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在这项工作中，我们研究了铁电HfZrO存储器的程序/擦除速度和数据保留之间的性能权衡。采用带捕获机制的单斜HfNO层来提高数据保留。在HfNO厚度优化下，HfZrO/HfNO栅极堆栈可以实现易失性和非易失性的功能化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Program/erase speed and data retention trade-off in negative capacitance versatile memory

In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 Silicon Nanoelectronics Workshop (SNW)

自引率

0.00%

发文量