{"title":"28纳米体积和FDSOI低温MOSFET:(特邀论文)","authors":"A. Beckers, F. Jazaeri, C. Enz","doi":"10.1109/CICTA.2018.8706117","DOIUrl":null,"url":null,"abstract":"This paper presents an intensive overview of the characterization and modeling of advanced 28-nm bulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"28-nm Bulk and FDSOI Cryogenic MOSFET : (Invited Paper)\",\"authors\":\"A. Beckers, F. Jazaeri, C. Enz\",\"doi\":\"10.1109/CICTA.2018.8706117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an intensive overview of the characterization and modeling of advanced 28-nm bulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8706117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
28-nm Bulk and FDSOI Cryogenic MOSFET : (Invited Paper)
This paper presents an intensive overview of the characterization and modeling of advanced 28-nm bulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.