{"title":"具有成本效益的印刷忆阻器制造和分析","authors":"K. Choi, M. Awais, Hyung Chan Kim, Y. Doh","doi":"10.1109/CNNA.2012.6331465","DOIUrl":null,"url":null,"abstract":"Fabrication of the printed memristors and their memristive behavior have been presented for different metal-insulator-metal (MIM) structures. The printing techniques studied for the current work includes electrohydrodynamic printing (EHDP) and roll-to-plate. The materials used for the electrode deposition are silver (Ag) and indium titanium oxide (ITO) while zirconium oxide (ZrO2) and graphene oxide (GO) have been used for the sandwich layer between two electrodes on a polyimide (PI) substrate. Electrically stable bipolar resistive switching behavior of all the MIM structures with significant Off/On ratio has been observed. The analysis regarding device dimensions and its current voltage (IV) behavior with respect to the employed printed electronic techniques confirms their feasibility for the cost-effective memristive device fabrication.","PeriodicalId":387536,"journal":{"name":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","volume":"424 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Cost-effective printed memristor fabrication and analysis\",\"authors\":\"K. Choi, M. Awais, Hyung Chan Kim, Y. Doh\",\"doi\":\"10.1109/CNNA.2012.6331465\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fabrication of the printed memristors and their memristive behavior have been presented for different metal-insulator-metal (MIM) structures. The printing techniques studied for the current work includes electrohydrodynamic printing (EHDP) and roll-to-plate. The materials used for the electrode deposition are silver (Ag) and indium titanium oxide (ITO) while zirconium oxide (ZrO2) and graphene oxide (GO) have been used for the sandwich layer between two electrodes on a polyimide (PI) substrate. Electrically stable bipolar resistive switching behavior of all the MIM structures with significant Off/On ratio has been observed. The analysis regarding device dimensions and its current voltage (IV) behavior with respect to the employed printed electronic techniques confirms their feasibility for the cost-effective memristive device fabrication.\",\"PeriodicalId\":387536,\"journal\":{\"name\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"volume\":\"424 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CNNA.2012.6331465\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.2012.6331465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cost-effective printed memristor fabrication and analysis
Fabrication of the printed memristors and their memristive behavior have been presented for different metal-insulator-metal (MIM) structures. The printing techniques studied for the current work includes electrohydrodynamic printing (EHDP) and roll-to-plate. The materials used for the electrode deposition are silver (Ag) and indium titanium oxide (ITO) while zirconium oxide (ZrO2) and graphene oxide (GO) have been used for the sandwich layer between two electrodes on a polyimide (PI) substrate. Electrically stable bipolar resistive switching behavior of all the MIM structures with significant Off/On ratio has been observed. The analysis regarding device dimensions and its current voltage (IV) behavior with respect to the employed printed electronic techniques confirms their feasibility for the cost-effective memristive device fabrication.